Silicon carbide (SiC) 

      Silicon carbide (SiC) is a high-quality artificial ceramic material with excellent physical properties and is widely used in semiconductors, heat-resistant materials and other fields. The following are the main performance parameters of silicon carbide:

physical properties
Specific Gravity, S.G.: Approximately 3.2 g/cm3
Porosity: less than 20%
Vickers Hardness: 2500-3000 HV
Flexural Strength: 300-700 MPa
Compressive Strength: 2000-4000 MPa
Young's Modulus: 400-450 GPa
Fracture Toughness: 3-5 MPa√m

thermal properties
Coefficient of Thermal Expansion:
40~400°C: about 4.0×10^-6/°C
0~800°C: about 5.0×10^-6/°C7
Thermal Conductivity: 60-180 W/m·K 7
Specific Heat: 600-800 J/kg·K

Electrical properties
Dielectric Strength/Resistivity (Dielectric Strength): >10 KV/mm
Volume Resistivity:
20°C: >10^10 Ω·cm
500°C: >10^5 Ω·cm
Dielectric constant (Permittivity)@1MHz: 9.7 C^2/(N·m^2)
Dielectric Loss Angle@1MHz: <10^-4

Silicon carbide is widely used in semiconductor device manufacturing, wear-resistant and heat-resistant components, nuclear reactor structural materials and other fields due to its excellent thermal stability, high strength and hardness, and excellent insulation.