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Silicon Nitride (Si3N4)
Silicon Nitride/Si3N4
Silicon nitride is a heat-resistant, wear-resistant and chemical-resistant non-oxide ceramic material with excellent mechanical, thermal and electrical properties.
Physical properties
Specific gravity (S.G): 3.2 g/cm³
Porosity: less than 5%
Vickers hardness (HV1 Hardness): 1600~1800 HV
Flexural Strength: 800~1200 MPa
Compressive Strength: 3000~4000 MPa
Young's Modulus: 3.0 x 10^11 Pa
Fracture Toughness: 6~8 MPam^1/2
Thermal properties
Coefficient of Thermal Expansion:
40 ~ 400°C: 3.0 x 10^-6/°C
40 ~ 800°C: 3.3 x 10^-6/°C
Thermal Conductivity: 15~35 W/m·K
Specific Heat: 690 J/kg·K
Electrical properties
Thermal shock/resistance Dielectric Strength: 14~20 kV/mm
Volume Resistivity:
20°C: > 10^14 Ω·cm
500°C: > 10^10Ω·cm
Dielectric constant (Permittivity) (1MHz): 7.8 C²/(N·m²)
Dielectric Loss Angle (1MHz): < 2 x 10^-4
Silicon nitride also has excellent corrosion resistance and biocompatibility, so it is widely used in machinery, aerospace, chemical industry, biomedicine and other fields.
Physical properties
Specific gravity (S.G): 3.2 g/cm³
Porosity: less than 5%
Vickers hardness (HV1 Hardness): 1600~1800 HV
Flexural Strength: 800~1200 MPa
Compressive Strength: 3000~4000 MPa
Young's Modulus: 3.0 x 10^11 Pa
Fracture Toughness: 6~8 MPam^1/2
Thermal properties
Coefficient of Thermal Expansion:
40 ~ 400°C: 3.0 x 10^-6/°C
40 ~ 800°C: 3.3 x 10^-6/°C
Thermal Conductivity: 15~35 W/m·K
Specific Heat: 690 J/kg·K
Electrical properties
Thermal shock/resistance Dielectric Strength: 14~20 kV/mm
Volume Resistivity:
20°C: > 10^14 Ω·cm
500°C: > 10^10Ω·cm
Dielectric constant (Permittivity) (1MHz): 7.8 C²/(N·m²)
Dielectric Loss Angle (1MHz): < 2 x 10^-4
Silicon nitride also has excellent corrosion resistance and biocompatibility, so it is widely used in machinery, aerospace, chemical industry, biomedicine and other fields.